700V N-Channel Super Junction MOSFET
HCD70R600S_HCU70R600S
June 2015
HCD70R600S / HCU70R600S
700V N-Channel Super Junction MOSFET
FEATURES
Originative Ne...
Description
HCD70R600S_HCU70R600S
June 2015
HCD70R600S / HCU70R600S
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
BVDSS = 700 V
RDS(on) typ = 0.54 ȍ
ID = 7.3 A
D-PAK I-PAK
2
1 1
32 3
HCD70R600S HCU70R600S 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
700 7.3 4.6 22 ρ20 120 2.0 0.5 15
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25) - Derate above 25
2.5 69 0.55
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Units V A A A V mJ A mJ
V/ns W W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 1.8 50 110
Units /W
క͑΄...
Similar Datasheet