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HCD65R660S

Part Number	HCD65R660S
Manufacturer	SemiHow
Description	650V N-Channel Super Junction MOSFET
Published	Apr 8, 2016
Detailed Description	HCD65R660S_HCU65R660S June 2015 HCD65R660S / HCU65R660S 650V N-Channel Super Junction MOSFET FEATURES Originative Ne...
Datasheet	HCD65R660S PDF File

Overview

HCD65R660S_HCU65R660S June 2015 HCD65R660S / HCU65R660S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ = 0.
6 ȍ ID = 6.
2 A D-PAK I-PAK 2 1 1 32 3 HCD65R660S HCU65R660S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drai...

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HCD65R660S 650V N-Channel Super Junction MOSFET - SemiHow

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