DMN65D8LW

DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(on) Max 3Ω @ VGS = 10V 4Ω @ VGS = 5V ID TA = +25°C 300mA 260mA Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1KV (HBM) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q101) for High Reliability. https://www.diodes.com/quality/product-definitions/ Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc Mechanical Data Case: SOT323 (Standard) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte ...