DMN2501UFB4

ADVANCE INFORMATION DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 0.4Ω @ VGS = 4.5V 0.5 Ω @ VGS = 2.5V 0.7 Ω @ VGS = 1.8V ID TA = +25°C 1.5A 1.3A 1.1A Features and Benefits  Low On-Resistance  Very Low Gate Threshold Voltage VGS(TH), 1.0V Max.  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surfaced Mount Package  Ultra-Low Package Profile, 0.4mm Maximum Package Height  ESD Protected Gate  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Power Management Functions Mechanical Data  Case: X2-DFN1006-3  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4  Weight: 0.001 grams (Approximate) Drain X2-DFN1006-3 ESD PROTECTED Bottom View S D G Top View Internal Schematic Gate Body Diode Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN2501UFB4-7 DMN2501UFB4-7B Case X2-DFN10...