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DMN2028USS

Diodes

N-Channel MOSFET


Description
ADVANCE INFORMATION Product Summary V(BR)DSS 20V RDS(on) max 20mΩ @ VGS= 4.5V 28mΩ @ VGS= 2.5V ID max TA = +25°C (Note 6) 9.8A 8.3A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  ...



Diodes

DMN2028USS

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