Fast Rectifiers
ES1F - ES1J Fast Rectifiers
ES1F - ES1J
Fast Rectifiers
Features
• For surface mount applications. • Glass passivated j...
Description
ES1F - ES1J Fast Rectifiers
ES1F - ES1J
Fast Rectifiers
Features
For surface mount applications. Glass passivated junction. Low profile package. Easy pick and place. Built-in strain relief. Superfast recovery times for high efficiency.
July 2007
SMA(DO-214AC) Color Band Denotes Cathode
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value ES1F ES1G ES1H
VRRM IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave (JEDEC method)
300 400 500 1.0
30
TJ TSTG
PD
Junction Temperature Storage Temperature Range Power Dissipation
150 -55 to 150
1.47
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
ES1J
600
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient *
RθJL
Thermal Resistance, Junction to Lead *
* P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area.
Value
85 35
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
VF Maximum Forward Voltage @ IF = 1.0 A
Trr
Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
IR
Maximum Reverse Current @ rated VR TA = 25°C TA = 100°C
Cj
Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz
Value
1.3
35
5.0 100
10.0
1.7 8.0
Units
V A A °C °C W
Units
°C/W °C/W
Units
V ns uA pF
©2007 Fairchild Semiconductor Corporation
ES1F - ES1J Rev. A...
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