Document
Replaces DS5883-3
DIM400NSM33-F000
Single Switch IGBT Module
DS5883-4 October 2011 (LN28811)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free Construction
APPLICATIONS
High Reliability Inverters
Motor Controllers Traction Drives
Choppers
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM400NSM33-F000 is a single switch 3300V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
KEY PARAMETERS
VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
3300V 2.8V 400A 800A
* Measured at the auxiliary terminals
4(C) C
G
2(C)
E 3(E)
1(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM400NSM33-F000
Note: When ordering, please use the complete part number
Outline type code: N
(See Fig. 11 for further information) Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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DIM400NSM33-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES VGES
IC IC(PK) Pmax
I2t
Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value
Visol Isolation voltage – per module QPD Partial discharge – per module
VGE = 0V
Test Conditions
Tcase = 90°C
1ms, Tcase = 115°C
Tcase = 25°C, Tj = 150°C
VR = 0, tp = 10ms, Tj = 125ºC Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS
Max. Units
3300 ±20 400 800 5200 24
V V A A W kA2s
6000 V
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Comparative Tracking Index):
350
Symbol Rth(j-c) Rth(j-c) Rth(c-h)
Tj
Parameter Thermal resistance – transistor (per arm)
Thermal resistance – diode (per arm) Thermal resistance – case to heatsink (per module)
Junction temperature
Test Conditions
Continuous dissipation – junction to case Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease)
Transistor
Diode
Tstg Storage temperature range
Mounting – M6
Screw torque
Electrical connections – M4
Electrical connections – M8
Min Typ. Max Units
- - 24 °C/kW
- - 48 °C/kW
- - 8 °C/kW - - 150 °C - - 125 °C -40 - 125 °C - - 5 Nm - - 2 Nm - - 10 Nm
2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com
DIM400NSM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
ICES
IGES VGE(TH) VCE(sat) †
IF IFM VF †
Cies Qg Cres LM RINT
SCData
Collector cut-off current
Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage (IGBT arm) Input capacitance Gate charge Reverse transfer capacitance Module inductance Internal resistance
Short circuit current, ISC
VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125°C VGE = ± 20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 400A VGE = 15V, IC = 400A, Tj = 125°C DC tp = 1ms IF = 400A IF = 400A, Tj = 125°C VCE = 25V, VGE = 0V, f = 1MHz ±15V VCE = 25V, VGE = 0V, f = 1MHz
Tj = 125°C, VCC = 2500V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L* x dI/dt IEC 60747-9
Min Typ Max 2 30 1
5.5 6.5 7.0 2.8 3.6 400 800 2.9 3.0 72 10 1.1 15 135
1850
Units mA mA μA V V V A A V V nF μC nF nH μ
A
Note: † Measured at the auxiliary terminals * L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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DIM400NSM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off) tf
EOFF td(on)
tr
Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time
EON Turn-on energy loss
Qrr Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energ.