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DIM400NSM33-F000 Dataheets PDF



Part Number DIM400NSM33-F000
Manufacturers Dynex
Logo Dynex
Description Single Switch IGBT
Datasheet DIM400NSM33-F000 DatasheetDIM400NSM33-F000 Datasheet (PDF)

Replaces DS5883-3 DIM400NSM33-F000 Single Switch IGBT Module DS5883-4 October 2011 (LN28811) FEATURES  10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon  Isolated AlSiC Base with AlN Substrates  Lead Free Construction APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Drives  Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages.

  DIM400NSM33-F000   DIM400NSM33-F000



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Replaces DS5883-3 DIM400NSM33-F000 Single Switch IGBT Module DS5883-4 October 2011 (LN28811) FEATURES  10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon  Isolated AlSiC Base with AlN Substrates  Lead Free Construction APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Drives  Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM400NSM33-F000 is a single switch 3300V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 3300V 2.8V 400A 800A * Measured at the auxiliary terminals 4(C) C G 2(C) E 3(E) 1(E) Fig. 1 Circuit configuration ORDERING INFORMATION Order As: DIM400NSM33-F000 Note: When ordering, please use the complete part number Outline type code: N (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1/8 DIM400NSM33-F000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VCES VGES IC IC(PK) Pmax I2t Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Visol Isolation voltage – per module QPD Partial discharge – per module VGE = 0V Test Conditions Tcase = 90°C 1ms, Tcase = 115°C Tcase = 25°C, Tj = 150°C VR = 0, tp = 10ms, Tj = 125ºC Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS Max. Units 3300 ±20 400 800 5200 24 V V A A W kA2s 6000 V 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 33mm Clearance: 20mm CTI (Comparative Tracking Index): 350 Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Parameter Thermal resistance – transistor (per arm) Thermal resistance – diode (per arm) Thermal resistance – case to heatsink (per module) Junction temperature Test Conditions Continuous dissipation – junction to case Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Mounting – M6 Screw torque Electrical connections – M4 Electrical connections – M8 Min Typ. Max Units - - 24 °C/kW - - 48 °C/kW - - 8 °C/kW - - 150 °C - - 125 °C -40 - 125 °C - - 5 Nm - - 2 Nm - - 10 Nm 2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400NSM33-F000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions ICES IGES VGE(TH) VCE(sat) † IF IFM VF † Cies Qg Cres LM RINT SCData Collector cut-off current Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage (IGBT arm) Input capacitance Gate charge Reverse transfer capacitance Module inductance Internal resistance Short circuit current, ISC VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125°C VGE = ± 20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 400A VGE = 15V, IC = 400A, Tj = 125°C DC tp = 1ms IF = 400A IF = 400A, Tj = 125°C VCE = 25V, VGE = 0V, f = 1MHz ±15V VCE = 25V, VGE = 0V, f = 1MHz Tj = 125°C, VCC = 2500V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L* x dI/dt IEC 60747-9 Min Typ Max 2 30 1 5.5 6.5 7.0 2.8 3.6 400 800 2.9 3.0 72 10 1.1 15 135 1850 Units mA mA μA V V V A A V V nF μC nF nH μ A Note: † Measured at the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3/8 DIM400NSM33-F000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol Parameter td(off) tf EOFF td(on) tr Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energ.


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