DIM400DDS12-A000

11.5 ±0.2 3 14 ±0.2 Replaces DS5841-2 DIM400DDS12-A000 Dual Switch IGBT Module DS5841-3 July 2014 (LN31762) 6 ±0.2 FEATURES 18 ±100.µ2s Short Circuit Withstand  Non4P4un±c0h.2Through Silicon  Isolated 5C7u B±a0s.2e with Al2O3 Substrates  Lead Free Construction KEY PARAMETERS 6 x O7 VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 28 ±0.5 1200V 2s.2crVewing depth 4m00aAx 8 800A * Measured at the power busbars, not the auxiliary terminals AP5P5L.2IC±A0T.3IONS 11.8H5igh±0R.2eliability Inverters  Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM400DDS12-A000 is a dual switch 1200V, nchannel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 1(E) 5(E) 6(G) 7(C) 3(C) 2(C) 12(C) 11(G) 4(E) 10(E) Fig. 1 Circuit configuration ORDERING INFORMATION Order As: DIM400DDS12-A000 Note: When ordering, please use the complete part number Outline type code: D (See Fig. 11 for further information) Fig. 2 Pack...