DIM250PHM33-TL000
Half Bridge IGBT Module
DS6116-1 July 2013 (LN30665)
FEATURES
Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT Isolated AlSiC Base with AlN Substrates
KEY PARAMETERS
VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
3300V 2.0V 250A 500A
* Measured at the auxilia...
