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DFM1200XXM45-TS000 Dataheets PDF



Part Number DFM1200XXM45-TS000
Manufacturers Dynex
Logo Dynex
Description Fast Recovery Diode Module
Datasheet DFM1200XXM45-TS000 DatasheetDFM1200XXM45-TS000 Datasheet (PDF)

DFM1200XXM45-TS000 Fast Recovery Diode Module DS6130-1 October 2013 (LN31069) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 2400A Rating APPLICATIONS  Chopper Diodes  Boost and Buck Converters  Free-wheel Circuits  Snubber Circuit  Resonant Converters  Induction Heating  Multi-level Switch Inverters The DFM1200XXM45-TS000 is a dual 4500V, fast recovery diode (FRD) module..

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DFM1200XXM45-TS000 Fast Recovery Diode Module DS6130-1 October 2013 (LN31069) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 2400A Rating APPLICATIONS  Chopper Diodes  Boost and Buck Converters  Free-wheel Circuits  Snubber Circuit  Resonant Converters  Induction Heating  Multi-level Switch Inverters The DFM1200XXM45-TS000 is a dual 4500V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation, making the device suitable for the latest drive designs employing PWM and high frequency switching. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 4500V 2.8V 1200A 2400A 7(K) 5(K) 6(A) 4(A) External connection required for a single 2400A diode Fig. 1 Circuit configuration ORDERING INFORMATION Order As: DFM1200XXM45-TS000 Note: When ordering, please use the complete part number Outline type code: X (See Fig. 7 for further information) Fig. 2 Package www.dynexsemi.com 1/6 DFM1200XXM45-TS000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VRRM IF IFM I2t Repetitive peak reverse voltage Forward current (per arm) Max. forward current I2t value fuse current rating Pmax Visol QPD Max. power dissipation Isolation voltage – per module Partial discharge – per module Test Conditions Tj = 125°C DC, Tcase = 65°C Tcase = 115°C, tp = 1ms VR = 0, tp = 10ms, Tj = 125°C Tcase = 25°C, Tj = 125°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 4800V, V2 = 3500V, 50Hz RMS Max. Units 4500 V 1200 A 2400 460 A kA2s 6250 W 7.4 kV 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Comparative Tracking Index): > 600 Symbol Parameter Rth(j-c) Rth(c-h) Tj Tstg Thermal resistance (per arm) Thermal resistance – case to heatsink (per module) Junction temperature Storage temperature range Screw Torque Test Conditions Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease) Mounting – M6 Electrical connections – M8 Min Typ. Max Units - - 16 °C/kW - - 8 °C/kW -40 - 125 °C -40 - 125 °C - - 5 Nm - - 10 Nm 2/6 www.dynexsemi.com STATIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise. Symbol Parameter IRM Peak reverse current VF Forward voltage LM Inductance Test Conditions VR = 4500V, Tj = 125°C IF = 1200A IF = 1200A, Tj = 125°C - DFM1200XXM45-TS000 Min Typ Max Units 90 mA 2.8 V 3.2 V 40 nH DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise (when used with DIM1200ASM45-TS000) Symbol Parameter Qrr Reverse recovery charge Irr Peak reverse recovery current Erec Reverse recovery energy Test Conditions IF = 1200A VR =2800V dIF/dt = 3000A/μs Min Typ. Max Units 1340 μC 1030 A 2200 mJ Tcase = 125°C unless stated otherwise (when used with DIM1200ASM45-TS000) Symbol Parameter Qrr Reverse recovery charge Irr Peak reverse recovery current Erec Reverse recovery energy Test Conditions IF = 1200A VR = 2800V dIF/dt = 3200A/μs Min Typ. Max Units 2200 μC 1100 A 3750 mJ www.dynexsemi.com 3/6 DFM1200XXM45-TS000 Fig. 3 Diode typical forward characteristics Fig. 4 Transient thermal impedance Fig. 5 DC current rating vs case temperature Fig. 6 Reverse Bias Safe Operating Area (RBSOA) 4/6 www.dynexsemi.com DFM1200XXM45-TS000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 4 x M8 57 ±0.25 130±0.5 57 ±0.25 screwing depth max. 16 7 18 ±0.1 140 ±0.5 124 ±0.25 44 ±0.2 +1.5 48 -0.0 5 ±0.2 61.2 ±0.3 16.5 ±0.2 6 xØ7 Nominal Weight: 1100g Module Outline Type Code: X Fig. 7 Module outline drawing 36.5±0.2 external connection 7(C) 5(C) 6(A) 4(A) external connection www.dynexsemi.com 5/6 DFM1200XXM45-TS000 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a g.


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