Fast IGBT
SKP10N60A SKW10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75%...
Description
SKP10N60A SKW10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower Eoff compared to previous generation combined with low conduction losses
C
Short circuit withstand time – 10 s Designed for:
- Motor controls - Inverter
G E
NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
- parallel switching capability Very soft, fast recovery anti-parallel Emitter Controlled
Diode
PG-TO-220-3-1
PG-TO-247-3
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type SKP10N60A SKW10N60A
VCE IC VCE(sat) Tj Marking Package
600V 10A
2.3V
150C K10N60 PG-TO-220-3-1
600V 10A
2.3V
150C K10N60 PG-TO-247-3
Maximum Ratings Parameter
Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol VCE IC
ICpuls -
IF
IFpuls VGE tSC
Ptot
Tj , Tstg Ts
1 J-STD-020 and JESD-022 2 Allowed number of short circui...
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