K10N60

SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75% lower Eoff compared to previous generation combined with low conduction losses C  Short circuit withstand time – 10 s  Designed for: - Motor controls - Inverter G E  NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability  Very soft, fast recovery anti-parallel Emitter Controlled Diode PG-TO-220-3-1 PG-TO-247-3  Pb-free lead plating; RoHS compliant  Qualified according to JEDEC1 for target applications  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKP10N60A SKW10N60A VCE IC VCE(sat) Tj Marking Package 600V 10A 2.3V 150C K10N60 PG-TO-220-3-1 600V 10A 2.3V 150C K10N60 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  600V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC  600V, Tj  150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj , Tstg Ts 1 J-STD-020 and JESD-022 2 Allowed number of short circui...