FB1L2Q

DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES Up to 0.7 A current drive available On-chip bias resistor Low power consumption during drive PACKAGE DRAWING (UNIT: mm) QUALITY GRADES Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. FB1 SERIES LISTS Products Marking FB1A4A FB1L2Q FB1A3M FB1F3P FB1J3P FB1L3N FB1A4M P30 P31 P32 P33 P36 P34 P35 R1 (KΩ) − 0.47 1.0 2.2 3.3 4.7 10 R2 (KΩ) 10 4.7 1.0 10 10 10 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 10 V Collector current (DC) IC(DC) 0.7 A Collector current (Pulse) IC(pulse) * 1.0 A Base current (DC) IB(DC) 20 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW≤10 ms, duty cycle≤50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16180EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed ...