RoHS
MBT6517LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
* Collector Dissipation: Pc=225mW(Ta=25 )
* Collector-Emitter Voltage :Vceo=350V
ABSOLUTE MAXIMUM RATINGS at Ta=25
DCharacteristic
Symbol Rating
Collector-Base Voltage
Vcbo
350
TCollector-Emitter Voltage
Vceo
350
.,LEmitter-Base Voltage
Collector Current Base Current
Vebo...
