JCS1HN60C

N R N-CHANNEL MOSFET JCS1HN60C MAIN CHARACTERISTICS ID 0.5 A VDSS 600 V Rdson（@Vgs=10V） 15 Ω Qg 3.6 nC TO-92 Package z z APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z z Crss ( 2.8pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 2.8pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS1HN60TC-O-T-N-A JCS1HN60C JCS1HN60TC-R-T-N-A JCS1HN60C Package TO-92 TO-92 Halogen Free NO YES NO Packaging Brede Brede Device Weight 0.216 g(typ) 0.216 g(typ) ：201311A 1/9 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol － Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ （ 1） Drain Current - pulse （note 1） IDM Gate-Source Voltage VGSS （ 2） Single Pulsed Avalanche Energy（note 2） EAS （ 1） Avalanche Current（note 1） IAR （ 1） Repetitive Avalanche Energy （note 1） EAR （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Range Temperature TJ，TSTG Maximum Lead Temperature for Soldering Purposes TL JCS1HN60C Value JCS1HN60C 600 0.5 0.31 2.0 ±30 20 1.0 Unit V A A A V mJ A 2.0 mJ 4.2 3.0 0.025 V/ns W W/℃ -55～+150 ℃ 300 ℃ ：201311A 2/9 R ELECTRICAL CHARACTERISTICS JCS1HN60C Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSS ID=2...