Document
N R N-CHANNEL MOSFET
JCS5N50C
MAIN CHARACTERISTICS
Package
ID VDSS Rdson(Vgs=10V) Qg
5A 500 V 1.45Ω 14nC
z z z UPS
APPLICATIONS
z High frequency switching mode power supply
z Electronic ballast z UPS
z z Crss ( 14pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes JCS5N50VC-O-V-N-B JCS5N50RC-O-R-N-B JCS5N50RC-O-R-N-A JCS5N50CC-O-C-N-B JCS5N50FC-O-F-N-B
Marking JCS5N50VC JCS5N50RC JCS5N50RC JCS5N50CC JCS5N50FC
Package IPAK DPAK DPAK TO-220C TO-220MF
Halogen Free NO NO NO NO NO
Packaging Tube Tube Brede Tube Tube
Device Weight 0.35 g(typ) 0.30g(typ) 0.30g(typ) 2.15 g(typ) 2.20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
JCS5N50C
Parameter
Symbol
JCS5N50VC/RC
Value JCS5N50CC
- Drain-Source Voltage
VDSS
500
Drain Current -continuous
ID T=25℃ T=100℃
5 3.16
( 1)
Drain Current - pulse (note 1)
IDM
20
Gate-Source Voltage
VGSS
±30
( 2)
Single Pulsed Avalanche Energy(note 2)
EAS
305
( 1) Avalanche Current(note 1)
IAR
5
( 1)
Repetitive Avalanche Energy (note 1)
EAR
10.1
( 3) Peak Diode Recovery dv/dt
dv/dt
4.5
(note 3)
Power Dissipation
PD TC=25℃ -Derate above 25℃
91 0.73
101 0.81
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering Purposes
TL
300
* *Drain current limited by maximum junction temperature
JCS5N50FC 500 5* 3.16* 20*
41 0.33
Unit V A A A V mJ A mJ
V/ns
W W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JCS5N50C
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
500 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.64 - V/℃
Zero Gate Voltage Drain Current
IDSS
VDS=500V,VGS=0V, TC=25℃ VDS=400V, TC=125℃
- - 1 μA - - 10 μA
Gate-body leakage current, forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
Gate-body leakage current, reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
On-Characteristics
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=2.5A
- - 1.45 Ω
Forward Transconductance
gfs
VDS = 40V, ID=2.5A(note 4) - 5.5 -
S
Dynamic Characteristics
Input capacitance Output capacitance
Ciss Coss
VDS=25V, VGS =0V, f=1.0MHZ
- 473 613 pF - 53 102 pF
Reverse transfer capacitance
Crss
- 14 19 pF
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ELECTRICAL CHARACTERISTICS
Switching Characteristics
Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge
td(on) tr td(off) tf Qg Qgs Qgd
VDD=250V,ID=5A,RG=25Ω (note 4,5)
VDS =400V , ID=5A VGS =10V (note 4,5)
JCS5N50C
- 45 60 ns - 26 34 ns - 133 170 ns - 214 270 ns - 14 20 nC - 3.5 - nC - 6 - nC
- Drain-Source Diode Characteristics and .