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JCS5N50RC Dataheets PDF



Part Number JCS5N50RC
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS5N50RC DatasheetJCS5N50RC Datasheet (PDF)

N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson(Vgs=10V) Qg 5A 500 V 1.45Ω 14nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 14pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS5N50VC-O-V-N-B JCS5N50RC-O-R-N-B JCS5N50RC-O-R-N-A JCS5N50CC-O-C-N-B JCS5N50FC-O-F.

  JCS5N50RC   JCS5N50RC



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N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson(Vgs=10V) Qg 5A 500 V 1.45Ω 14nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 14pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS5N50VC-O-V-N-B JCS5N50RC-O-R-N-B JCS5N50RC-O-R-N-A JCS5N50CC-O-C-N-B JCS5N50FC-O-F-N-B Marking JCS5N50VC JCS5N50RC JCS5N50RC JCS5N50CC JCS5N50FC Package IPAK DPAK DPAK TO-220C TO-220MF Halogen Free NO NO NO NO NO Packaging Tube Tube Brede Tube Tube Device Weight 0.35 g(typ) 0.30g(typ) 0.30g(typ) 2.15 g(typ) 2.20 g(typ) :201402B 1/14 R ABSOLUTE RATINGS (Tc=25℃) JCS5N50C Parameter Symbol JCS5N50VC/RC Value JCS5N50CC - Drain-Source Voltage VDSS 500 Drain Current -continuous ID T=25℃ T=100℃ 5 3.16 ( 1) Drain Current - pulse (note 1) IDM 20 Gate-Source Voltage VGSS ±30 ( 2) Single Pulsed Avalanche Energy(note 2) EAS 305 ( 1) Avalanche Current(note 1) IAR 5 ( 1) Repetitive Avalanche Energy (note 1) EAR 10.1 ( 3) Peak Diode Recovery dv/dt dv/dt 4.5 (note 3) Power Dissipation PD TC=25℃ -Derate above 25℃ 91 0.73 101 0.81 Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature JCS5N50FC 500 5* 3.16* 20* 41 0.33 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ :201402B 2/14 R ELECTRICAL CHARACTERISTICS JCS5N50C Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics - Drain-Source Voltage BVDSS ID=250μA, VGS=0V 500 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 0.64 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=500V,VGS=0V, TC=25℃ VDS=400V, TC=125℃ - - 1 μA - - 10 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - - 100 nA Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA On-Characteristics Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 2.0 - 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=2.5A - - 1.45 Ω Forward Transconductance gfs VDS = 40V, ID=2.5A(note 4) - 5.5 - S Dynamic Characteristics Input capacitance Output capacitance Ciss Coss VDS=25V, VGS =0V, f=1.0MHZ - 473 613 pF - 53 102 pF Reverse transfer capacitance Crss - 14 19 pF :201402B 3/14 R ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge td(on) tr td(off) tf Qg Qgs Qgd VDD=250V,ID=5A,RG=25Ω (note 4,5) VDS =400V , ID=5A VGS =10V (note 4,5) JCS5N50C - 45 60 ns - 26 34 ns - 133 170 ns - 214 270 ns - 14 20 nC - 3.5 - nC - 6 - nC - Drain-Source Diode Characteristics and .


JCS5N50VC JCS5N50RC JCS5N50CC


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