JCS840S

www.DataSheet.co.kr N R N-CHANNEL MOSFET JCS840 MAIN CHARACTERISTICS Package ID 8 A VDSS 500 V Rdson（@Vgs=10V） 0.8 Ω Qg 59 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z zCrssB B ( 35pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow CrssB B (typical 35pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS840S-O-S-N-B JCS840S JCS840B-O-B-N-B JCS840B JCS840C-O-C-N-B JCS840C JCS840F-O-F-N-B JCS840F Package TO-263 TO-262 TO-220C TO-220MF Halogen Free NO NO NO NO Packaging Tube Tube Tube Tube Device Weight 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) ：201007A 1/12 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr R ABSOLUTE RATINGS (Tc=25℃) JCS840 Parameter Symbol Value JCS840S/B/C JCS840F － Drain-Source Voltage VDSSB B 500 Drain Current -continuous IDB T=25℃ B T=100℃ 8.0 5.1 8.0* 5.1* （ 1） Drain Current - pulse （note 1） IDMB B 32 32* Gate-Source Voltage VGSSB B ±30 （ 2） Single Pulsed Avalanche Energy（note EASB B 2） 320 （ 1） Avalanche Current（note 1） IARB B 8.0 （ 1） Repetitive Avalanche Current（note 1） EARB B 13.4 （ 3） dv/dt 3.5 Peak Diode Recovery dv/dt（note 3） Power Dissipation PDB T =25℃CB B B -Derate above 134 1.08 44 0.35 25℃ Operating and Storage Temperature T ，TJ STGB B BB Range -55～+150 Maximum Lead Tem...