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HU60N03

HAOLIN

30V N-Channel MOSFET

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HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18.5 nC (Typ.)  Extended Safe Operating Area  Lowe...


HAOLIN

HU60N03

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