HD60N03

HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 9mΩ (Typ.) @V GS=10V  100% Avalanche Tested TO-252 TO-251 HD60N03 HU60N03 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 30 60 36.6 220 ±20 230 60 11 7.0 PD TJ, TSTG TL Power Dissipation (TA = 25℃)* Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 2.0 100 0.7 -55 to +150 300 Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient* RθJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 1.0 40 62.5 Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ Units ℃/W HD60N03_HU60N03 Electrical Characteristic...