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VS-10TQ035PbF Dataheets PDF



Part Number VS-10TQ035PbF
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-10TQ035PbF DatasheetVS-10TQ035PbF Datasheet (PDF)

www.vishay.com VS-10TQ...PbF Series, VS-10TQ...-N3 Series Vishay Semiconductors Schottky Rectifier, 10 A Base cathode 2 TO-220AC PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS 13 Cathode Anode TO-220AC 10 A 35 V, 40 V, 45 V 0.49 V 15 mA at 125 °C 175 °C Single die 13 mJ FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance •.

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www.vishay.com VS-10TQ...PbF Series, VS-10TQ...-N3 Series Vishay Semiconductors Schottky Rectifier, 10 A Base cathode 2 TO-220AC PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS 13 Cathode Anode TO-220AC 10 A 35 V, 40 V, 45 V 0.49 V 15 mA at 125 °C 175 °C Single die 13 mJ FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The VS-10TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM Rectangular waveform tp = 5 μs sine VF 10 Apk, TJ = 125 °C TJ Range VALUES 10 35/45 1050 0.49 - 55 to 175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL VS10TQ035PbF VS10TQ035-N3 VS10TQ040PbF VS10TQ040-N3 VS10TQ045PbF VS10TQ045-N3 UNITS Maximum DC reverse voltage VR Maximum working peak 35 35 40 40 45 45 V reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS VALUES 50 % duty cycle at TC = 151 °C, rectangular waveform 10 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated 10 ms sine or 6 ms rect. pulse VRRM applied TJ = 25 °C, IAS = 2 A, L = 6.5 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1050 280 13 2 UNITS A mJ A Revision: 11-Oct-11 1 Document Number: 94120 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-10TQ...PbF Series, VS-10TQ...-N3 Series Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop See fig. 1 VFM (1) Maximum reverse leakage current See fig. 2 IRM (1) Maximum junction capacitance Typical series inductance Maximum voltage rate of change CT LS dV/dt Note (1) Pulse width < 300 μs, duty cycle < 2 % TEST CONDITIONS 10 A 20 A TJ = 25 °C 10 A 20 A TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.57 0.67 0.49 0.61 2 15 900 8.0 10 000 UNITS V mA pF nH V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased Approximate weight Mounting torque minimum maximum Marking device Case style TO-220AC VALUES - 55 to 175 UNITS °C 2.0 °C/W 0.50 2g 0.07 oz. 6 (5) 12 (10) kgf · cm (lbf ·in) 10TQ035 10TQ045 Revision: 11-Oct-11 2 Document Number: 94120 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) www.vishay.com VS-10TQ...PbF Series, VS-10TQ...-N3 Series Vishay Semiconductors 1000 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics IR - Reverse Current (mA) 1000 100 TJ = 175 °C 10 1 0.1 0.01 0.001 TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 0.0001 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) TJ = 25 °C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 ZthJC - Thermal Impedance (°C/W) 1 0.1 D = 0.50 D = 0.33 D = 0.25 0.01 D = 0.17 D = 0.08 0.001 0.00001 Single pulse (thermal resistance) P DM t 1 t 2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) 10 Fig. 4 - Maximum Thermal Impedance ZthJ.


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