Super Fast Recovery Diode
Super Fast Recovery Diode
RFN3BM2SFH
Datasheet
Series Standard Fast Recovery
Dimensions (Unit : mm)
AEC-Q101 Qual...
Description
Super Fast Recovery Diode
RFN3BM2SFH
Datasheet
Series Standard Fast Recovery
Dimensions (Unit : mm)
AEC-Q101 Qualified Land Size Figure (Unit : mm)
6.0
3.0 2.0 6.0
Application General rectification
1
Features 1) Low switching loss 2) High current overload capacity
ROHM : TO-252 JEITA : SC-63
1 : Manufacture Date
Construction Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
1.6 1.6
TO-252 2.3 2.3
Structure
Cathode
Open Anode
Absolute Maximum Ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
200 V
Reverse voltage
VR Direct voltage
200 V
Average rectified foward current Io 60Hz half sin wave , Resistive load
3A
Forward current surge peak
IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
40
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- 55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=3A - 0.9 0.98 V
Reverse current
IR
VR=200V
- 0.05 10 A
Reverse recovery time
trr IF=0.5A, IR=1A, Irr=0.25×IR - 12 25 ns
Thermal resistance
Rth(j-c)
Junction to case
- - 6.0 °C / W
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1/4
2018.12 - Rev.C
RFN3BM2SFH Electrical Characteristic Curves
Datasheet
FORWARD CURRENT : IF(A)
100
10
1 Tj = 150°C
Tj = 125°C 0.1 Tj = 75°C
0.01 0
Tj = 25°C 200 400 600 800 1000 1200 1400 1600
FORWARD VOLTAGE : VF(mV) VF...
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