RFN10BM3SFH

Super Fast Recovery Diode RFN10BM3SFH Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1 Features 1) Low switching loss 2) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 Structure Cathode Anode Anode Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 350 V Reverse voltage VR Direct voltage 350 V Average rectified foward current Io 60Hz half sin wave , Resistive load Tc=34°C 10 A Forward current surge peak IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C() 80 A Operating junction temperature Tj - 150 °C Storage temperature Tstg Electrical Characteristics (Tj = 25°C) - 55 to 150 °C ()1-3pin commom circuit Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current Reverse recovery time VF IF=10A - 1.25 1.5 V IR VR=350V - 0.05 10 A trr IF=0.5A, IR=1A, Irr=0.25×IR - 22 30 ns Thermal resistance Rth(j-c) Junction to case - - 6.0 °C / W www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/4 2018.12 - Rev.D RFN10BM3SFH Electrical characteristic curves Datasheet FORWARD CURRENT : IF(A) 100 10 1 Tj = 150°C Tj = 125°C 0.1 Tj = 75°C 0.01 0 Tj = 25°C 1-3pi...