RFCM3050

RFCM3050 Features  Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise  Unconditionally Stable Under all Terminations  High Output Capability  24.5dB Min. Gain at 1003MHz  440mA Max. at 24VDC Applications  40MHz to 1003MHz CATV Amplifier Systems RFCM3050 40-1003MHZ GAAS/GAN POWER DOUBLER MODULE Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm Functional Block Diagram Product Description The RFCM3050 is a Power Doubler amplifier SMD module. The part employs GaAs MESFET, GaAs pHemt and GaN Hemt die, has high output capability, and is operated from 40MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the device can be externally adjusted for optimum distortion performance vs. power consumption over a wide range of output level. DC current of the device can be externally adjusted for optimum distortion performance versus power consumption over a wide range of output level. Ordering Information RFCM3050SB RFCM3050SQ RFCM3050SR RFCM3050TR7 RFCM3050TR13 RFCM3050PCBA-410 RFCM3050PCK-410 Sample Bag 5 pieces Sample Bag 25 pieces 7” Reel with 100 pieces 7” Reel with 500 pieces 13” Reel with 1000 pieces Fully Assembled Evaluation Board Fully Assembled Evaluation Board with Sample Pack GaAs HBT GaAs MESFET InGaP HBT Optimum Technology Matching® Applied SiGe BiCMOS GaAs pHEMT Si BiCMOS Si CMOS SiGe HBT Si BJT GaN HEMT RF MEMS L...