N-Channel MOSFET
A D VNAENWC EP IRNOFDOURCMTA T I O N
DMN1150UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 12V
RDS(o...
Description
A D VNAENWC EP IRNOFDOURCMTA T I O N
DMN1150UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 12V
RDS(on) max
0.15Ω @ VGS = 4.5V 0.185Ω @ VGS = 2.5V 0.21Ω @ VGS = 1.8V
ID TA = +25°C
1.41A
1.25A 1.16A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
DC-DC Converters Power management functions
Features
Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
ESD PROTECTED
Bottom View
S D
G
Top View Internal Schematic
Gate
Body Diode
Gate Protection Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMN1150UFB-7B
Case X1-DFN1006-3
Packaging 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) &...
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