DMN1019USN

NEW PRODUCT Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 9.3A 8.5A 7.9A 6.9A 4.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Load Switch DC-DC Converters Power Management Functions SC59 DMN1019USN 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SC59 Case Material – Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) D D G ESD PROTECTED Top View GS Top View Pin Configuration Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN1019USN-7 DMN1019USN-13 Case SC59 SC59 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions ...