BLF6G22LS-40P

BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 410 28 13.5 19 30 30 [2] 1805 to 1880 [1] 410 28 5 20.3 18.3 34.9 [2] 1-carrier W-CDMA 2110 to 2170 410 28 15 19 32 37 [3] 1805 to 1880 [1] 410 28 5 20.5 18.0 42.3 [3] [1] The performance is tested on the Class AB demo board as depicted in Figure 11. [2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [3] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  Integrated ESD protection  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifier for base stations and multi carrier applications in the 2110 MHz...