2N3811A

2N3811 2N3811A SILICON DUAL PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3811 and 2N3811A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 60 60 5.0 50 500 600 -65 to +200 UNITS V V V mA mW mW °C ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=50V 10 nA IEBO VEB=4.0V 20 nA BVCBO IC=10μA 60 V BVCEO IC=10mA 60 V BVEBO IE=10μA 5.0 V VCE(SAT) IC=100μA, IB=10μA 0.20 V VCE(SAT) IC=1.0mA, IB=100μA 0.25 V VBE(SAT) IC=100μA, IB=10μA 0.70 V VBE(SAT) IC=1.0mA, IB=100μA 0.80 V VBE(ON) VCE=5.0V, IC=100μA 0.70 V hFE VCE=5.0V, IC=1.0μA 75 hFE VCE=5.0V, IC=10μA 225 hFE VCE=5.0V, IC=100μA 300 900 hFE VCE=5.0V, IC=500μA 300 900 hFE VCE=5.0V, IC=1.0mA 300 900 hFE VCE=5.0V, IC=10mA 250 fT VCE=5.0V, IC=500μA, f=30MHz 30 MHz fT VCE=5.0V, IC=1.0mA, f=100MHz 100 500 MHz Cob VCB=5.0V, IE=0, f=100kHz 4.0 pF Cib VBE=0.5V, IC=0, f=100kHz 8.0 pF hie VCE=10V, IC=1.0mA, f...