2N3799

2N3798 2N3798A 2N3799 2N3799A SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3798, 2N3799 series devices are silicon PNP epitaxial planar transistors designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N3798 2N3799 2N3798A 2N3799A UNITS Collector-Base Voltage VCBO 60 90 V Collector-Emitter Voltage VCEO 60 90 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 50 mA Power Dissipation PD 360 mW Power Dissipation (TC=25°C) PD 1.2 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance JA 0.49 °C/mW Thermal Resistance JC 150 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=50V 10 nA ICBO VCB=50V, TA=150°C 10 μA IEBO VEB=4.0V 20 nA BVCBO IC=10μA (2N3798, 2N3799) 60 V BVCBO IC=10μA (2N3798A, 2N3799A) 90 V BVCEO IC=10mA (2N3798, 2N3799) 60 V BVCEO IC=10mA (2N3798A, 2N3799A) 90 V BVEBO IE=10μA 5.0 V VCE(SAT) IC=100μA, IB=10μA 0.20 V VCE(SAT) IC=1.0mA, IB=100μA 0.25 V VBE(SAT) IC=100μA, IB=10μA 0.70 V VBE(SAT) IC=1.0mA, IB=100μA 0.80 V VBE(ON) VCE=5.0V, IC=100μA 0.70 V 2N3798 2N3799 2N3798A 2N3799A MIN MAX MIN MAX hFE VCE=5.0V, IC=1.0μA -- 75 - hFE VCE=5.0V, IC=10μA 100 - 225 - hFE VCE=5.0V, IC=100μA 150 - 300 - hFE VCE=5.0V, IC=100μA, TA...