PH3135-90S
Radar Pulsed Power Transistor 90W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty
Features
• NPN silicon microwave power tr...
PH3135-90S
Radar Pulsed Power
Transistor 90W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty
Features
NPN silicon microwave power
transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant
M/A-COM Products Released, 10 Aug 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature
Symbol
VCES VEBO
IC PTOT TSTG
TJ
Rating
65 3.0 10.7 580 -65 to +200 200
Units
V V A W °C °C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 40mA
Collector-Emitter Leakage Current VCE = 40V
Thermal Resistance
Vcc = 36V, Pout = 90W
Output Power
Vcc = 36V, Pout = 90W
Power Gain
Vcc = 36V, Pout = 90W
Collector Efficiency
Vcc = 36V, Pout = 90W
Input Return Loss Load Mismatch Tolerance
Vcc = 36V, Pout = 90W Vcc = 36V, Pout = 90W
Frequency
F = 3.1, 3.3, 3.5 GHz F = 3.1, 3.3, 3.5 GHz F = 3.1, 3.3, 3.5 GHz F = 3.1, 3.3, 3.5 GHz F = 3.1, 3.3, 3.5 GHz F = 3.1, 3.3, 3.5 GHz
Symbol Min
BVCES ICES
RTH(JC) PIN GP
ηC
RL VSWR-T
65 7.5 35 -
Max Units
-V 7.5 mA 0.3 °C/W 16 W
- dB -% -6 dB 2:1 -
1
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