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MBR3060CT-Y Dataheets PDF



Part Number MBR3060CT-Y
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Dual Common Cathode Schottky Rectifier
Datasheet MBR3060CT-Y DatasheetMBR3060CT-Y Datasheet (PDF)

MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (haloge.

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MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) TO-220AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER MBR30 MBR30 MBR30 MBR30 MBR30 SYMBOL 45CT-Y 60CT-Y 80CT-Y 100CT-Y 150CT-Y Marking code MBR30 45CT MBR30 60CT MBR30 80CT MBR30 100CT MBR30 150CT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak repetitive forward current (Rated VR, Square wave, 20KHz) VRRM 45 60 80 100 150 VRMS 31 42 56 70 105 VDC 45 60 80 100 150 IF(AV) 30 IFRM 30 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF=15A, TJ=25°C IF=15A, TJ=125°C IF=30A, TJ=25°C IF=30A, TJ=125°C Maximum reverse current @ rated VR TJ=25°C TJ=125°C Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle IFSM IRRM VF IR dV/dt RθJC TJ TSTG 200 1.0 0.5 0.7 0.77 0.6 0.67 0.82 0.73 - 0.84 0.70 0.94 0.82 0.2 40 10 7.5 10000 1.0 - 55 to +150 - 55 to +150 0.95 0.92 1.02 0.98 0.1 5 1.5 UNIT V V V A A A A V mA V/μs °C/W °C °C Document Number: DS_D1411034 Version: C14 MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor ORDERING INFORMATION PART NO. MBR30xxCT-Y (Note 1) PACKING CODE C0 PACKING CODE SUFFIX G PACKAGE TO-220AB Note 1: "xx" defines voltage from 45V (MBR3045CT-Y) to 150V (MBR30150CT-Y) PACKING 50 / Tube EXAMPLE PREFERRED PART NO. MBR3060CT-Y C0 MBR3060CT-Y C0G PART NO. MBR3060CT-Y MBR3060CT-Y PACKING CODE C0 C0 PACKING CODE SUFFIX G DESCRIPTION Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) AVERAGE FORWARD A CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE 35 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD 5 WITH HEATSINK 0 0 50 100 150 CASE TEMPERATURE (oC) PEAK FORWARD SURGE CURRENT (A) FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 300 250 8.3ms Single Half Sine Wave 200 150 100 50 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 IF-INSTANTANEOUS FORWARD CURRENT (A) FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 100 MBR3045CT-Y MBR3060CT-Y 10 1 MBR30150CT-Y MBR3080CT-Y - 100CT-Y 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) 1 INSTANTANEOUS REVERSE CURRENT (mA) FIG. 4- TYPICAL REVERSE CHARACTERISTICS PER LEG 100 MBR3045CT-Y MBR3060CT-Y - 150CT-Y 10 TJ=125°C 1 TJ=75°C 0.1 0.01 TJ=25°C 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D1411034 Version: C14 JUNCTION CAPACITANCE (pF) A TRANSIENT THERMAL IMPEDANCE (℃/W) FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG 10000 MBR3045CT-Y MBR3060CT-Y MBR3080CT-Y - 150CT-Y f=1.0MHz Vsig=50mVp-p 1000 100 0.1 1 10 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS 100 MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 10 1 0.1 0.01 0.1 1 10 T-PULSE DURATION. (sec) 100 DIM. A B C D E F G H I J K L M Unit (mm) Min Max - 10.50 2.62 3.44 2.80 4.20 0.68 0.94 3.54 4.00 14.60 16.00 13.19 14.79 2.41 2.67 4.42 4.76 1.14 1.40 5.84 6.86 2.20 2.80 0.35 0.64 Unit (inch) Min Max - 0.413 0.103 0.135 0.110 0.165 0.027 0.037 0.139 0.157 0.575 0.630 0.519 0.582 0.095 0.105 0.174 0.187 0.045 0.055 0.230 0.270 0.087 0.110 0.014 0.025 MARKING DIAGRAM P/N G YWW F = Marking Code = Green Compound = Date Code = Factory Code Document Number: DS_D1411034 Version: C14 CREAT BY ART MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpos.


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