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MBR1645 Dataheets PDF



Part Number MBR1645
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Schottky Barrier Rectifier
Datasheet MBR1645 DatasheetMBR1645 Datasheet (PDF)

MBR1635 thru MBR16150 Taiwan Semiconductor CREAT BY ART FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Schottky Barrier Rectifier - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AC Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefi.

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MBR1635 thru MBR16150 Taiwan Semiconductor CREAT BY ART FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Schottky Barrier Rectifier - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AC Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.86 g (approximately) TO-220AC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER MBR MBR MBR MBR MBR MBR MBR SYMBOL 1635 1645 1650 1660 1690 16100 16150 Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 Maximum RMS voltage Maximum DC blocking voltage VRMS 24 31 35 42 63 70 105 VDC 35 45 50 60 90 100 150 Maximum average forward rectified current IF(AV) 16 Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 32 UNIT V V V A A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF=16A, TJ=25℃ IF=16A, TJ=125℃ IRRM 1.0 VF 0.63 0.57 0.5 A 0.75 0.85 0.95 V 0.65 0.75 0.92 Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle IR dV/dt RθJC TJ TSTG 0.5 15 0.5 10 10000 3 - 55 to +150 - 55 to +150 0.3 7.5 0.1 mA 5 V/μs OC/W OC OC Document Number: DS_D1308053 Version: J13 MBR1635 thru MBR16150 Taiwan Semiconductor ORDERING INFORMATION PART NO. MBR16xx (Note 1) AEC-Q101 QUALIFIED Prefix "H" PACKING CODE GREEN COMPOUND CODE C0 Suffix "G" Note 1: "xx" defines voltage from 35V (MBR1635) to 150V (MBR16150) PACKAGE TO-220AC PACKING 50 / Tube EXAMPLE PREFERRED P/N MBR1660 C0 MBR1660 C0G MBR1660HC0 PART NO. MBR1660 MBR1660 MBR1660 AEC-Q101 QUALIFIED H PACKING CODE C0 C0 C0 GREEN COMPOUND CODE G DESCRIPTION Green compound AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE 20 16 12 8 RESISTIVE OR 4 INDUCTIVE LOAD WITH HEATSINK 0 0 50 100 CASE TEMPERATURE (oC) 150 PEAK FORWARD SURGE CURRENT (A) 350 300 250 200 150 100 50 1 FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 10 NUMBER OF CYCLES AT 60 Hz 100 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 TJ=125℃ 10 1 Pulse Width=300μs 1% Duty Cycle TJ=25℃ FIG. 4- TYPICAL REVERSE CHARACTERISTICS 100 10 TJ=125℃ 1 TJ=25℃ 0.1 0.1 MBR1635-MBR1645 MBR1650-MBR1660 MBR1690-MBR16150 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) 0.01 0.001 0 MBR1635-MBR1645 MBR1650-MBR16150 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D1308053 Version: J13 JUNCTION CAPACITANCE (pF) A TRANSIENT THERMAL IMPEDANCE (℃/W) 10000 FIG. 5- TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p 1000 100 0.1 1 10 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS 100 MBR1635 thru MBR16150 Taiwan Semiconductor FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 100 10 1 0.1 0.01 0.1 1 10 T-PULSE DURATION. (sec) 100 DIM. A B C D E F G H I J K L M N Unit (mm) Min Max - 10.50 2.62 3.44 2.80 4.20 0.68 0.94 3.54 4.00 14.60 16.00 0.00 1.60 13.19 14.79 4.95 5.20 4.42 4.76 1.14 1.40 5.84 6.86 2.20 2.80 0.35 0.64 Unit (inch) Min - 0.103 Max 0.413 0.135 0.110 0.165 0.027 0.037 0.139 0.157 0.575 0.630 0.000 0.063 0.519 0.582 0.195 0.205 0.174 0.187 0.045 0.055 0.230 0.270 0.087 0.110 0.014 0.025 MARKING DIAGRAM P/N G YWW F = Marking Code = Green Compound = Date Code = Factory Code Document Number: DS_D1308053 Version: J13 CREAT BY ART MBR1635 thru MBR16150 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a p.


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