Document
MBR10L100CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBR10L100CT
Maximum repetitive peak reverse voltage
VRRM
100
Maximum RMS voltage Maximum DC blocking voltage
VRMS VDC
70 100
Maximum average forward rectified current
IF(AV)
10
Peak repetitive forward current (Rated VR, Square Wave, 20KHz)
IFRM
10
Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load
IFSM
120
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2) IF= 5A, TJ=25℃ IF= 5A, TJ=125℃ IF=10A, TJ=25℃ IF=10A, TJ=125℃
Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃
Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR dV/dt RθJC
TJ TSTG
1 TYP MAX 0.73 0.76 0.59 0.65 0.82 0.85 0.66 0.71 TYP MAX
0.30 20
0.50 15 10000 2.8
- 55 to +150 - 55 to +150
UNIT V V V A A
A A
V
μA mA V/μs OC/W OC OC
Document Number: DS_D1308037
Version: G13
CREAT BY ART
ORDERING INFORMATION
PART NO. MBR10L100CT
AEC-Q101
QUALIFIED Prefix "H"
PACKING CODE GREEN COMPOUND CODE
C0 Suffix "G"
MBR10L100CT
Taiwan Semiconductor
PACKAGE TO-220AB
PACKING 50 / Tube
EXAMPLE
PREFERRED P/N PART NO.
MBR10L100CT C0 MBR10L100CT C0G MBR10L100CTHC0
MBR10L100CT MBR10L100CT MBR10L100CT
AEC-Q101 QUALIFIED
H
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
AVERAGE FORWARD A CURRENT (A)
FIG.1 FORWARD CURRENT DERATING CURVE 12
10
8
6
4 RESISTIVE OR INDUCTIVE LOAD
2 WITH HEATSINK
0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC)
PACKING CODE
C0 C0 C0
GREEN COMPOUND CODE
G
DESCRIPTION
Green compound AEC-Q101 qualified
PEAK FORWARD SURGE CURRENT (A)
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
175 8.3ms Single Half Sine Wave
150 JEDEC Method
125
100
75
50
25
0 1
10 NUMBER OF CYCLES AT 60 Hz
100
FORWARD CURRENT (A)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100
10 TJ=125℃
1
TJ=25℃
0.1 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V)
1
REVERSE LEAKAGE CURRENT (μA)
10000
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
1000
100 TJ=125℃
10
1
0.1 TJ=25℃
0.01 10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308037
Version: G13
JUNCTION CAPACITANCE (pF) A TRANSIENT THERMAL IMPEDANCE (℃/W)
CREAT BY ART
FIG. 5 TYPICAL JUNCTION CAPACITANCE 1000
100
f=1.0MHz Vsig=50mVp-p
10 0.1
1 10 REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
100
MBR10L100CT
Taiwan Semiconductor
1000
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG
100
10
1
0.1 0.01
0.1 1 10 T-PULSE DURATION(s)
100
DIM.
A B C D E F G H I J K L M
Unit (mm)
Min Max - 10.50
2.62 3.44 2.80 4.20 0.68 0.94 3.54 4.00 14.60 16.00 13.19 14.79 2.41 2.67 4.42 4.76 1.14 1.40 5.84 6.86 2.20 2.80 0.35 0.64
Unit (inch)
Min Max - 0.413
0.103 0.135 0.110 0.165 0.027 0.037 0.139 0.157 0.575 0.630 0.519 0.582 0.095 0.105 0.174 0.187 0.045 0.055 0.230 0.270 0.087 0.110 0.014 0.025
MARKING DIAGRAM
P/N G YWW F
= Specific Device Code = Green Compound = Date Code = Factory Code
Document Number: DS_D1308037
Version: G13
CREAT BY ART
MBR10L100CT
Taiwan Semiconductor
Notice
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their.