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MBR10L100CT Dataheets PDF



Part Number MBR10L100CT
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Dual Common Cathode Schottky Rectifier
Datasheet MBR10L100CT DatasheetMBR10L100CT Datasheet (PDF)

MBR10L100CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefi.

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MBR10L100CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) TO-220AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR10L100CT Maximum repetitive peak reverse voltage VRRM 100 Maximum RMS voltage Maximum DC blocking voltage VRMS VDC 70 100 Maximum average forward rectified current IF(AV) 10 Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 10 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 120 Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF= 5A, TJ=25℃ IF= 5A, TJ=125℃ IF=10A, TJ=25℃ IF=10A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle IRRM VF IR dV/dt RθJC TJ TSTG 1 TYP MAX 0.73 0.76 0.59 0.65 0.82 0.85 0.66 0.71 TYP MAX 0.30 20 0.50 15 10000 2.8 - 55 to +150 - 55 to +150 UNIT V V V A A A A V μA mA V/μs OC/W OC OC Document Number: DS_D1308037 Version: G13 CREAT BY ART ORDERING INFORMATION PART NO. MBR10L100CT AEC-Q101 QUALIFIED Prefix "H" PACKING CODE GREEN COMPOUND CODE C0 Suffix "G" MBR10L100CT Taiwan Semiconductor PACKAGE TO-220AB PACKING 50 / Tube EXAMPLE PREFERRED P/N PART NO. MBR10L100CT C0 MBR10L100CT C0G MBR10L100CTHC0 MBR10L100CT MBR10L100CT MBR10L100CT AEC-Q101 QUALIFIED H RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD A CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 12 10 8 6 4 RESISTIVE OR INDUCTIVE LOAD 2 WITH HEATSINK 0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC) PACKING CODE C0 C0 C0 GREEN COMPOUND CODE G DESCRIPTION Green compound AEC-Q101 qualified PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM FORWARD SURGE CURRENT 175 8.3ms Single Half Sine Wave 150 JEDEC Method 125 100 75 50 25 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 FORWARD CURRENT (A) FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 10 TJ=125℃ 1 TJ=25℃ 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) 1 REVERSE LEAKAGE CURRENT (μA) 10000 FIG. 4 TYPICAL REVERSE CHARACTERISTICS 1000 100 TJ=125℃ 10 1 0.1 TJ=25℃ 0.01 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D1308037 Version: G13 JUNCTION CAPACITANCE (pF) A TRANSIENT THERMAL IMPEDANCE (℃/W) CREAT BY ART FIG. 5 TYPICAL JUNCTION CAPACITANCE 1000 100 f=1.0MHz Vsig=50mVp-p 10 0.1 1 10 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS 100 MBR10L100CT Taiwan Semiconductor 1000 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 10 1 0.1 0.01 0.1 1 10 T-PULSE DURATION(s) 100 DIM. A B C D E F G H I J K L M Unit (mm) Min Max - 10.50 2.62 3.44 2.80 4.20 0.68 0.94 3.54 4.00 14.60 16.00 13.19 14.79 2.41 2.67 4.42 4.76 1.14 1.40 5.84 6.86 2.20 2.80 0.35 0.64 Unit (inch) Min Max - 0.413 0.103 0.135 0.110 0.165 0.027 0.037 0.139 0.157 0.575 0.630 0.519 0.582 0.095 0.105 0.174 0.187 0.045 0.055 0.230 0.270 0.087 0.110 0.014 0.025 MARKING DIAGRAM P/N G YWW F = Specific Device Code = Green Compound = Date Code = Factory Code Document Number: DS_D1308037 Version: G13 CREAT BY ART MBR10L100CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their.


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