Document
Elektronische Bauelemente
SSF2102
2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSF2102 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
TS2
SOT-323
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40
REF.
G H J K L
Millimeter Min. Max.
0.1 REF. 0.525 REF. 0.08 0.25
0.8 TYP. 0.65 TYP.
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
Leader Size 7 inch
Top View
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
ID 2.1
Continuous Source-Drain Current(Diode Conduction)
IS
0.6
Maximum Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s)
PD RθJA
200 625
Operating Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit V V A A
mW °C / W
°C
http://www.SeCoSGmbH.com/
14-Jan-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 2
Elektronische Bauelemente
SSF2102
2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage
BVDSS VGS(th)
20 0.65
0.95
1.2
V VGS=0, ID=10µA V VDS=VGS, ID=50µA
Gate-Source Leakage Current Drain-Source Leakage Current Forward Transconductance 1
IGSS - - ±100 nA VGS= ±8V, VDS=0 IDSS - - 1 µA VDS=20V, VGS=0 gfs - 8 - S VDS=5V, ID=3.6A
Diode Forward Voltage
VSD - 0.76 1.2 V IS=0.94A, VGS=0
Static Drain-Source On-Resistance 1
RDS(ON)
- 45 - 70
Dynamic Characteristics
60 115
VGS=4.5V, ID=3.6A mΩ
VGS=2.5V, ID=3.1A
Total Gate Charge
Qg - 4
Gate-Source Charge
Qgs - 0.65
Gate-Drain Change Input Capacitance 2 Output Capacitance 2 Reverse Transfer Capacitance 2
Qgd Ciss Coss Crss
- 1.5 - 300 - 120 - 80
Switching Parameters
Turn-on Delay Time 2
Td(on)
Rise Time 2
Tr
Turn-off Delay Time 2
Td(off)
Fall Time 2
Tf
Note: 1. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 2. These parameters have no way to verify.
-7 - 55 - 16 - 10
-
-
ID=3.6A nC VDS=10V
VGS=4.5V
VGS =0 pF VDS=10V
f =1.0MHz
VDD=10V VGEN=4.5V nS RG=6Ω RL=5.5Ω ID=3.6A
http://www.SeCoSGmbH.com/
14-Jan-2014 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 2
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