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SSF2102 Dataheets PDF



Part Number SSF2102
Manufacturers SeCoS
Logo SeCoS
Description N-Ch Enhancement Mode Power MOSFET
Datasheet SSF2102 DatasheetSSF2102 Datasheet (PDF)

Elektronische Bauelemente SSF2102 2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSF2102 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. .

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Elektronische Bauelemente SSF2102 2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSF2102 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING TS2 SOT-323 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40 REF. G H J K L Millimeter Min. Max. 0.1 REF. 0.525 REF. 0.08 0.25 0.8 TYP. 0.65 TYP. PACKAGE INFORMATION Package MPQ SOT-323 3K Leader Size 7 inch Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID 2.1 Continuous Source-Drain Current(Diode Conduction) IS 0.6 Maximum Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) PD RθJA 200 625 Operating Junction & Storage Temperature TJ, TSTG 150, -55~150 Unit V V A A mW °C / W °C http://www.SeCoSGmbH.com/ 14-Jan-2014 Rev.A Any changes of specification will not be informed individually. Page 1 of 2 Elektronische Bauelemente SSF2102 2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage BVDSS VGS(th) 20 0.65 0.95 1.2 V VGS=0, ID=10µA V VDS=VGS, ID=50µA Gate-Source Leakage Current Drain-Source Leakage Current Forward Transconductance 1 IGSS - - ±100 nA VGS= ±8V, VDS=0 IDSS - - 1 µA VDS=20V, VGS=0 gfs - 8 - S VDS=5V, ID=3.6A Diode Forward Voltage VSD - 0.76 1.2 V IS=0.94A, VGS=0 Static Drain-Source On-Resistance 1 RDS(ON) - 45 - 70 Dynamic Characteristics 60 115 VGS=4.5V, ID=3.6A mΩ VGS=2.5V, ID=3.1A Total Gate Charge Qg - 4 Gate-Source Charge Qgs - 0.65 Gate-Drain Change Input Capacitance 2 Output Capacitance 2 Reverse Transfer Capacitance 2 Qgd Ciss Coss Crss - 1.5 - 300 - 120 - 80 Switching Parameters Turn-on Delay Time 2 Td(on) Rise Time 2 Tr Turn-off Delay Time 2 Td(off) Fall Time 2 Tf Note: 1. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 2. These parameters have no way to verify. -7 - 55 - 16 - 10 - - ID=3.6A nC VDS=10V VGS=4.5V VGS =0 pF VDS=10V f =1.0MHz VDD=10V VGEN=4.5V nS RG=6Ω RL=5.5Ω ID=3.6A http://www.SeCoSGmbH.com/ 14-Jan-2014 Rev.A Any changes of specification will not be informed individually. Page 2 of 2 .


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