SSE04N60SL

Elektronische Bauelemente SSE04N60SL 4A , 600V , RDS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-220P FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6 5.8 7.0 1.2 1.45 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 4 2.5 Pulsed Drain Current IDM 16 Total Power Dissipation Single Pulse Avalanche Energy 1 TC=25°C Derate above 25°C PD EAS 100 0.8 217 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 62.5 Maximum Thermal Resistance Junction-Case Notes: 1. L=30mH,IAS=3.45A, VDD=155V, RG=25Ω, Starting TJ =25°C RθJC 1.25 Unit V V A A A W mJ °C °C / W °C / W http://www.SeCoSGmbH.com/ 17-Jul-2014 Rev. A Any changes of specification will not be info...