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AH11 Dataheets PDF



Part Number AH11
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description High Dynamic Range Dual Amplifier
Datasheet AH11 DatasheetAH11 Datasheet (PDF)

AH11 High Dynamic Range Dual Amplifier Applications  Mobile Infrastructure  Defense / Homeland Security  Fixed Wireless Product Features  150 – 3000 MHz  +44 dBm OIP3 (1900 MHz, balanced circuit)  Single-ended performance:  13.5 dB Gain  2.7 dB Noise Figure  +21 dBm P1dB  Single +5 Volt Supply  Lead-free / RoHS-compliant SOIC-8 package SOIC-8 package Functional Block Diagram General Description The AH11 is a high linearity amplifier for use in digital communication systems. It combi.

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AH11 High Dynamic Range Dual Amplifier Applications  Mobile Infrastructure  Defense / Homeland Security  Fixed Wireless Product Features  150 – 3000 MHz  +44 dBm OIP3 (1900 MHz, balanced circuit)  Single-ended performance:  13.5 dB Gain  2.7 dB Noise Figure  +21 dBm P1dB  Single +5 Volt Supply  Lead-free / RoHS-compliant SOIC-8 package SOIC-8 package Functional Block Diagram General Description The AH11 is a high linearity amplifier for use in digital communication systems. It combines low noise figure and high intercept point into a low-cost SMT solution. This device extends the linear efficiency advantages of TriQuint’s AH1 to higher power levels by combining two internally matched die. This dual-amplifier configuration allows for the optimal design of balanced or push-pull operation. The amplifier can also be used for single-ended operation in each branch of a diversity receive system. A mature and reliable GaAs MESFET technology is employed to maximize linearity while achieving low noise figure. The SOIC-8 package is lead-free /RoHS-compliant package and is thermally enhanced to achieve an MTTF greater than 100 years at a case temperature of 85C. All devices are 100% RF and DC tested. Pin Configuration Pin No. 1 2, 3, 6, 7 4 5 8 Backside Paddle Function RF In (Amp 1) RF/DC GND RF In (Amp 2) RF Out (Amp 2) RF Out (Amp 1) RF/DC GND Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc. Ordering Information Part No. AH11-G Description High Dynamic Range Dual Amplifier AH11BAL-PCB 0.6-2.1 GHz Balanced Eval Board Standard T/R size = 500 pieces on a 7” reel. - 1 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH11 High Dynamic Range Dual Amplifier Specifications Absolute Maximum Ratings Parameter Rating Storage Temperature -55 to +125 C RF Input Power, CW, 50Ω,T = 25ºC 4 dB above Input P1dB Supply Voltage +6 V Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Vdd Tch (for >106 hours MTTF) Operating Temp. Range Min -40 Typ +5 Max +160 +85 Units V oC oC Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications (Single-Ended Configuration) Test conditions unless otherwise noted: T = 25 ºC, Supply Voltage = +5 V, Frequency = 800 MHz, 50  System, tested on each singleended amplifier (there are two amplifiers in an AH11 package) Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure Supply Voltage (Vdd) Operating Current (Idd) Thermal Resistance (jnc. to case) Conditions See Note 1. See Note 2. Min 150 12.4 +37 120 Typical 800 13.5 -8 -15 +21 +41 2.7 5 150 Max 3000 180 29 Units MHz MHz dB dB dB dBm dBm dB V mA C/W Notes: 1. S21 and S11 can be improved in the band of interest with some slight input tuning. 2. OIP3 measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression of the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. Slight OIP3 degradation of about 2 dB is expected to occur at lower temperatures (from 25 ºC to –40 ºC). Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc. - 2 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH11 High Dynamic Range Dual Amplifier Device Characterization Data S-Parameter Data S-Parameters, single unmatched device (2 per package): Vdd = +5 V, 100% IDSS, T = 25 C, 50  system, calibrated to device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (angle) S22 (dB) 50 -2.63 -31.03 17.82 162.23 -23.39 47.82 -6.12 250 -9.02 -47.58 14.82 156.18 -20.06 8.90 -16.47 500 -9.98 -61.76 14.31 144.67 -20.01 -1.10 -20.37 750 -10.09 -83.24 13.83 132.14 -20.02 -6.79 -21.92 1000 -10.11 -102.89 13.29 119.28 -20.11 -11.57 -21.92 1250 -9.98 -122.71 12.76 106.77 -20.25 -14.32 -22.27 1500 -9.69 -141.39 12.18 94.43 -20.31 -18.20 -22.53 1750 -9.28 -159.83 11.61 83.21 -20.53 -21.39 -22.93 2000 -8.86 -175.83 11.06 72.08 -20.71 -24.33 -23.65 2250 -8.41 169.88 10.49 61.25 -20.82 -27.30 -23.68 2500 -7.81 155.71 9.92 50.78 -20.98 -29.62 -23.88 2750 -7.26 143.52 9.41 41.01 -21.11 -31.71 -25.42 3000 -6.70 133.22 8.81 31.62 -21.22 -34.23 -24.24 S22 (ang) -36.95 -55.07 -43.85 -31.28 -23.71 -17.24 -17.00 -10.89 -9.69 -13.98 -1.56 -1.60 5.13 Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc. - 3 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH11 High Dynamic Range Dual Amplifier Reference Design 600-2100 MHz (AH11BAL-PCB) Bill of Material Ref. Des. Q3 Q1, Q2 C1, C2, C4, C5, C8 C3 C6 C7 L1, L2 R1, R2 .


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