Document
AH11
High Dynamic Range Dual Amplifier
Applications
Mobile Infrastructure Defense / Homeland Security Fixed Wireless
Product Features
150 – 3000 MHz +44 dBm OIP3 (1900 MHz, balanced circuit) Single-ended performance:
13.5 dB Gain 2.7 dB Noise Figure +21 dBm P1dB Single +5 Volt Supply Lead-free / RoHS-compliant SOIC-8 package
SOIC-8 package
Functional Block Diagram
General Description
The AH11 is a high linearity amplifier for use in digital communication systems. It combines low noise figure and high intercept point into a low-cost SMT solution. This device extends the linear efficiency advantages of TriQuint’s AH1 to higher power levels by combining two internally matched die. This dual-amplifier configuration allows for the optimal design of balanced or push-pull operation. The amplifier can also be used for single-ended operation in each branch of a diversity receive system.
A mature and reliable GaAs MESFET technology is employed to maximize linearity while achieving low noise figure. The SOIC-8 package is lead-free /RoHS-compliant package and is thermally enhanced to achieve an MTTF greater than 100 years at a case temperature of 85C. All devices are 100% RF and DC tested.
Pin Configuration
Pin No.
1 2, 3, 6, 7 4 5 8 Backside Paddle
Function
RF In (Amp 1) RF/DC GND RF In (Amp 2) RF Out (Amp 2) RF Out (Amp 1) RF/DC GND
Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
AH11-G
Description
High Dynamic Range Dual Amplifier
AH11BAL-PCB 0.6-2.1 GHz Balanced Eval Board
Standard T/R size = 500 pieces on a 7” reel.
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AH11
High Dynamic Range Dual Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
-55 to +125 C
RF Input Power, CW, 50Ω,T = 25ºC
4 dB above Input P1dB
Supply Voltage
+6 V
Operation of this device outside the parameter ranges given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Vdd Tch (for >106 hours MTTF)
Operating Temp. Range
Min
-40
Typ
+5
Max
+160 +85
Units
V oC oC
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.
Electrical Specifications (Single-Ended Configuration)
Test conditions unless otherwise noted: T = 25 ºC, Supply Voltage = +5 V, Frequency = 800 MHz, 50 System, tested on each singleended amplifier (there are two amplifiers in an AH11 package)
Parameter
Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure Supply Voltage (Vdd) Operating Current (Idd) Thermal Resistance (jnc. to case)
Conditions
See Note 1. See Note 2.
Min
150 12.4
+37
120
Typical
800 13.5 -8 -15 +21 +41 2.7
5 150
Max
3000
180 29
Units
MHz MHz dB dB dB dBm dBm dB
V mA C/W
Notes: 1. S21 and S11 can be improved in the band of interest with some slight input tuning. 2. OIP3 measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression of the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. Slight OIP3 degradation of about 2 dB is expected to occur at lower temperatures (from 25 ºC to –40 ºC).
Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®
AH11
High Dynamic Range Dual Amplifier
Device Characterization Data
S-Parameter Data
S-Parameters, single unmatched device (2 per package): Vdd = +5 V, 100% IDSS, T = 25 C, 50 system, calibrated to device leads
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (angle) S22 (dB)
50
-2.63
-31.03
17.82
162.23
-23.39
47.82
-6.12
250
-9.02
-47.58
14.82
156.18
-20.06
8.90
-16.47
500
-9.98
-61.76
14.31
144.67
-20.01
-1.10
-20.37
750
-10.09
-83.24
13.83
132.14
-20.02
-6.79
-21.92
1000
-10.11 -102.89
13.29
119.28
-20.11
-11.57
-21.92
1250
-9.98
-122.71
12.76
106.77
-20.25
-14.32
-22.27
1500
-9.69
-141.39
12.18
94.43
-20.31
-18.20
-22.53
1750
-9.28
-159.83
11.61
83.21
-20.53
-21.39
-22.93
2000
-8.86
-175.83
11.06
72.08
-20.71
-24.33
-23.65
2250
-8.41
169.88
10.49
61.25
-20.82
-27.30
-23.68
2500
-7.81
155.71
9.92
50.78
-20.98
-29.62
-23.88
2750
-7.26
143.52
9.41
41.01
-21.11
-31.71
-25.42
3000
-6.70
133.22
8.81
31.62
-21.22
-34.23
-24.24
S22 (ang)
-36.95 -55.07 -43.85 -31.28 -23.71 -17.24 -17.00 -10.89 -9.69 -13.98 -1.56 -1.60 5.13
Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®
AH11
High Dynamic Range Dual Amplifier
Reference Design 600-2100 MHz (AH11BAL-PCB)
Bill of Material
Ref. Des.
Q3 Q1, Q2 C1, C2, C4, C5, C8 C3 C6 C7 L1, L2 R1, R2
.