INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD750
DESCRIPTION ·Collector-Emitte...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD750
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Current Capability
APPLICATIONS ·Designed for AF high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
110 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
7V 15 A
ICM Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
30 A 100 W 150 ℃
Tstg Storage Temperature Range
-65~150 ℃
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD750
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 4V
ICBO Collector Cutoff Current
VCB= 40V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 5A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
MIN TYP. MAX UNIT 80 V 7V
2.0 V 1.5 V 30 μA 40 30 120 1 MHz
hFE-2 Classifications QPO
30-60 40-80 60-120
isc website:www.iscsemi.cn
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