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SD103CWS-G Dataheets PDF



Part Number SD103CWS-G
Manufacturers Vishay
Logo Vishay
Description Small Signal Schottky Diodes
Datasheet SD103CWS-G DatasheetSD103CWS-G Datasheet (PDF)

www.vishay.com SD103AWS-G, SD103BWS-G, SD103CWS-G Vishay Semiconductors Small Signal Schottky Diodes MECHANICAL DATA Case: SOD-323 Weight: approx. 4.0 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and.

  SD103CWS-G   SD103CWS-G



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www.vishay.com SD103AWS-G, SD103BWS-G, SD103CWS-G Vishay Semiconductors Small Signal Schottky Diodes MECHANICAL DATA Case: SOD-323 Weight: approx. 4.0 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems • For general purpose applications • AEC-Q101 qualified available • Base P/N-G3 - green, commercial grade • Base P/N-HG3 - green, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PARTS TABLE PART ORDERING CODE SD103AWS-G3-08 or SD103AWS-G3-18 SD103AWS-G SD103AWS-HG3-08 or SD103AWS-HG3-18 SD103BWS-G3-08 or SD103BWS-G3-18 SD103BWS-G SD103BWS-HG3-08 or SD103BWS-HG3-18 SD103CWS-G3-08 or SD103CWS-G3-18 SD103CWS-G SD101CWS-HG3-08 or SD101CWS-HG3-18 INTERNAL CONSTRUCTION Single diode TYPE MARKING Z6 REMARKS Single diode Z7 Tape and reel Single diode Z8 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL Repetitive peak reverse voltage Forward continuous current (1) Single cycle surge Power dissipation (1) 10 μs square wave SD103AWS-G SD103BWS-G SD103CWS-G VRRM VRRM VRRM IF IFSM Ptot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air (1) RthJA Junction temperature Tj Operating temperature range Top Storage temperature range Tstg Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 40 30 20 350 2 200 VALUE 500 125 -55 to +125 -55 to +150 UNIT V V V mA A mW UNIT K/W °C °C °C Rev. 1.4, 21-Nov-13 1 Document Number: 81142 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SD103AWS-G, SD103BWS-G, SD103CWS-G Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. Leakage current Forward voltage drop Diode capacitance Reverse recovery time VR = 30 V VR = 20 V VR = 10 V IF = 20 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 50 mA to 200 mA, recover to 0.1 IR SD103AWS-G SD103BWS-G SD103CWS-G IR IR IR VF VF CD trr TYP. 50 10 MAX. 5 5 5 370 600 UNIT μA μA μA mV mV pF ns TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 I F - Forward Current (mA) 100 10 1 0.1 0.01 0 18488 0.2 0.4 0.6 0.8 VF - Forward Voltage (V) 1.0 Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage IR - Reverse Current (µA) 1000 100 10 1 0.1 Tamb = 125 °C 100 °C 75 °C 50 °C 25 °C 0.01 0 5 10 15 20 25 30 35 40 45 50 20084 VR - Reverse Voltage (V) Fig. 3 - Typical Variation of Reverse Current at Various Temperatures 5 4 tp = 300 ms duty cycle = 2 % 3 I F - Forward Current (A) 2 1 0 0 18489 0.5 1.0 VF - Forward Voltage (V) 1.5 Fig. 2 - Typical High Current Forward Conduction Curve C D - Diode Capacitance (pF) 100 10 1 0 18491 10 20 30 40 VR - Reverse Voltage (V) 50 Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.4, 21-Nov-13 2 Document Number: 81142 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SD103AWS-G, SD103BWS-G, SD103CWS-G Vishay Semiconductors 50 VR - Reverse Voltage (V) 40 30 I F = 400 mA 20 100 mA 200 mA 10 0 0 18492 100 200 Tamb - Ambient Temperature (°C) Fig. 5 - Blocking Voltage Deration vs. Temperature at Various Average Forward Currents PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0.1 (0.004) max. 1.15 (0.045) 0.8 (0.031) 0.2 (0.008) 0.15 (0.006) 0.10 (0.004) 0° to 8° 0.40 (0.016) 0.25 (0.010) Cathode bar 1.95 (0.077) 1.60 (0.063) 1.5 (0.059) 1.1 (0.043) 0.40 (0.016) 0.20 (0.008) 2.85 (0.112) 2.50 (0.098) Foot print recommendation: 0.6 (0.024) Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) Rev. 1.4, 21-Nov-13 3 Document Number: 81142 For technical questions within your region: [email protected],.


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