www.vishay.com
SD103AWS-G, SD103BWS-G, SD103CWS-G
Vishay Semiconductors
Small Signal Schottky Diodes
MECHANICAL DATA Case: SOD-323 Weight: approx. 4.0 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring
• The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications
• Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems
• For general purpose applications
• AEC-Q101 qualified available
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
PARTS TABLE
PART
ORDERING CODE
SD103AWS-G3-08 or SD103AWS-G3-18 SD103AWS-G
SD103AWS-HG3-08 or SD103AWS-HG3-18
SD103BWS-G3-08 or SD103BWS-G3-18 SD103BWS-G
SD103BWS-HG3-08 or SD103BWS-HG3-18
SD103CWS-G3-08 or SD103CWS-G3-18 SD103CWS-G
SD101CWS-HG3-08 or SD101CWS-HG3-18
INTERNAL CONSTRUCTION Single diode
TYPE MARKING Z6
REMARKS
Single diode
Z7 Tape and reel
Single diode
Z8
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1) Single cycle surge Power dissipation (1)
10 μs square wave
SD103AWS-G SD103BWS-G SD103CWS-G
VRRM VRRM VRRM
IF IFSM Ptot
Note (1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature
Tj
Operating temperature range
Top
Storage temperature range
Tstg
Note (1) Valid provided that electrodes are kept at ambient temperature
VALUE 40 30 20 350 2 200
VALUE 500 125
-55 to +125 -55 to +150
UNIT V V V mA A
mW
UNIT K/W °C °C °C
Rev. 1.4, 21-Nov-13
1 Document Number: 81142
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SD103AWS-G, SD103BWS-G, SD103CWS-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Leakage current
Forward voltage drop Diode capacitance Reverse recovery time
VR = 30 V VR = 20 V VR = 10 V IF = 20 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 50 mA to 200 mA, recover to 0.1 IR
SD103AWS-G SD103BWS-G SD103CWS-G
IR IR IR VF VF CD
trr
TYP.
50 10
MAX. 5 5 5
370 600
UNIT μA μA μA mV mV pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
I F - Forward Current (mA)
100
10
1
0.1
0.01 0
18488
0.2 0.4 0.6 0.8 VF - Forward Voltage (V)
1.0
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
IR - Reverse Current (µA)
1000 100
10 1 0.1
Tamb = 125 °C 100 °C 75 °C 50 °C 25 °C
0.01 0 5 10 15 20 25 30 35 40 45 50
20084
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various Temperatures
5 4 tp = 300 ms
duty cycle = 2 % 3
I F - Forward Current (A)
2
1
0 0
18489
0.5 1.0 VF - Forward Voltage (V)
1.5
Fig. 2 - Typical High Current Forward Conduction Curve
C D - Diode Capacitance (pF)
100
10
1 0
18491
10 20 30 40 VR - Reverse Voltage (V)
50
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.4, 21-Nov-13
2 Document Number: 81142
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SD103AWS-G, SD103BWS-G, SD103CWS-G
Vishay Semiconductors
50
VR - Reverse Voltage (V)
40
30 I F = 400 mA
20
100 mA 200 mA
10
0 0
18492
100 200 Tamb - Ambient Temperature (°C)
Fig. 5 - Blocking Voltage Deration vs. Temperature at Various Average Forward Currents
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.1 (0.004) max.
1.15 (0.045) 0.8 (0.031) 0.2 (0.008)
0.15 (0.006) 0.10 (0.004)
0° to 8°
0.40 (0.016) 0.25 (0.010)
Cathode bar
1.95 (0.077) 1.60 (0.063)
1.5 (0.059) 1.1 (0.043)
0.40 (0.016) 0.20 (0.008)
2.85 (0.112) 2.50 (0.098)
Foot print recommendation: 0.6 (0.024)
Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009
17443
1.6 (0.063)
0.6 (0.024)
0.6 (0.024)
Rev. 1.4, 21-Nov-13
3 Document Number: 81142
For technical questions within your region:
[email protected],.