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V10D60C Dataheets PDF



Part Number V10D60C
Manufacturers Vishay
Logo Vishay
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet V10D60C DatasheetV10D60C Datasheet (PDF)

www.vishay.com V10D60C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, pe.

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www.vishay.com V10D60C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 2 x 5.0 A 60 V 100 A 0.50 V 150 °C SMPD (TO-263AC) Circuit configuration Common cathode MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) per device per diode IF(AV) Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM Voltage rate of change (rated VR) Operating junction and storage temperature range dV/dt TJ, TSTG V10D60C 60 10 5 100 10 000 -40 to +150 UNIT V A A V/μs °C Revision: 22-Jan-2020 1 Document Number: 89993 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V10D60C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Instantaneous forward voltage per diode Reverse current per diode IF = 2.5 A IF = 5.0 A IF = 2.5 A IF = 5.0 A VR = 60 V TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VF (1) IR (2) Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms TYP. 0.49 0.55 0.39 0.50 7 MAX. - 0.70 - 0.60 700 30 UNIT V μA mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V10D60C per diode 3.5 Typical thermal resistance per device RθJC 2.5 per device RθJA (1)(2) 48 Notes (1) The heat generate.


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