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V10D60C
Vishay General Semiconductor
Dual TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
Anode 1 Anode 2
K Cathode
ADDITIONAL RESOURCES
3D 3D
3D Models
FEATURES
• Trench MOS Schottky technology
Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package
2 x 5.0 A 60 V 100 A 0.50 V
150 °C SMPD (TO-263AC)
Circuit configuration
Common cathode
MECHANICAL DATA
Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
per device per diode
IF(AV)
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
IFSM
Voltage rate of change (rated VR) Operating junction and storage temperature range
dV/dt TJ, TSTG
V10D60C 60 10 5
100
10 000 -40 to +150
UNIT V A
A V/μs °C
Revision: 22-Jan-2020
1
Document Number: 89993
For technical questions within your region:
[email protected],
[email protected],
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V10D60C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode Reverse current per diode
IF = 2.5 A IF = 5.0 A IF = 2.5 A IF = 5.0 A
VR = 60 V
TA = 25 °C
TA = 125 °C TA = 25 °C TA = 125 °C
VF (1) IR (2)
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms
TYP. 0.49 0.55 0.39 0.50
7
MAX. -
0.70 -
0.60 700 30
UNIT
V
μA mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10D60C
per diode
3.5
Typical thermal resistance
per device
RθJC
2.5
per device
RθJA (1)(2)
48
Notes
(1) The heat generate.