RU7080L

RU7080L N-Channel Advanced Power MOSFET Features 70V/80A, RDS (ON) =5.7mΩ(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description D Applications Power Supply G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 70 ±25 175 -55 to 175 80 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 320 A 80 A 56 125 W 62.5 1.2 °C/W 100 °C/W 225 mJ Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 1 www.ruichips.com RU7080L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU7080L Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=70V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±25V, VDS=0V RDS(ON)④ Drain-Source On-state Resistanc...