RU6099S

Features 60V/120A, RDS (ON) =6m(Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Available Applications Switching Application Systems Inverter Systems RU6099S N-Channel Advanced Power MOSFET Pin Description D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 60 ±25 175 -55 to 175 120 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 380 A 120 A 90 150 W 75 1 °C/W 62.5 °C/W 625 mJ Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2013 1 www.ruichips.com RU6099S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6099S Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 VDS=60V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C 1 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250...