N-Channel Advanced Power MOSFET
RU40120M
N-Channel Advanced Power MOSFET
Features
• 40V/120A,
RDS (ON) =2.7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Des...
Description
RU40120M
N-Channel Advanced Power MOSFET
Features
40V/120A,
RDS (ON) =2.7mΩ(Typ.)@VGS=10V
Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Applications
DC/DC Converters Power Supply
Pin Description
D D DD
SSS G PIN1
PDFN5060
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=10V)
ID② Continuous Drain Current@TA(VGS=10V)③
Maximum Power Dissipation@TC PD
③
Maximum Power Dissipation@TA
S
N-Channel MOSFET
Rating
Unit
TC=25°C
40 ±20 150 -55 to 150 50
V
°C °C A
TC=25°C
480 A
TC=25°C
120
TC=100°C
75
A
TA=25°C
21
TA=70°C
17
TC=25°C
96
TC=100°C
38
W
TA=25°C
4.2
TA=70°C
2.7
Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013
1
www.ruichips.com
RU40120M
Symbol
Parameter
Rating Unit
RθJC Thermal Resistance-Junction to Case
③
RθJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
1.3 30
EAS④ Avalanche Energy, Single Pulsed
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
400
Symbol
Parameter
Test Condition
RU40120M Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Volta...
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