N-Channel Advanced Power MOSFET
RU3090M
N-Channel Advanced Power MOSFET
Features
• 30V/98A, RDS (ON) =1.7mΩ(Typ.)@VGS=10V RDS (ON) =3.2mΩ(Typ.)@VGS=4.5...
Description
RU3090M
N-Channel Advanced Power MOSFET
Features
30V/98A, RDS (ON) =1.7mΩ(Typ.)@VGS=10V RDS (ON) =3.2mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design
Reliable and Rugged
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
PDFN5060
Applications
DC/DC Conversion Switching Application
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2012
N-Channel MOSFET
TC=25°C
TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C
Rating
Unit
30 ±20 150 -55 to 150 50
V
°C °C A
②
380
①
98
①
68
③
29
③
23 66
26
③
4.2
③
2.7
A A
W
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RU3090M
Mounted on Large Heat Sink
RθJC
③
RθJA
Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
④
EAS
Avalanche Energy, Single Pulsed
1.9 °C/W 30 °C/W
256 mJ
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU3090M Unit
Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage IGSS Gate Lea...
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