RU306C

RU306C N-Channel Advanced Power MOSFET Features 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available Applications DC/DC Converter Load Switch Pin Description SOT23-3 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 30 ±12 150 -55 to 150 1.3 ① 20 5 3.8 1.25 0.8 100 Unit V °C °C A A A W °C/W Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 www.ruichips.com RU306C Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU306C Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON)③ Drain-Source On-state Resistance VGS=0V, IDS=250A VDS=30V, VGS=0V TJ=85°C VDS=VGS, IDS=250A VGS=±12V, VDS=0V VGS=10V, IDS=6A VGS=4.5V, IDS=5A VGS=2.5V, IDS=4A 30 0.6 1 30 1 1.5 ±100 30 35 38 42 110 150 Unit...