RU30160S

RU30160S N-Channel Advanced Power MOSFET Features 30V/160A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description D Applications DC-DC Converters G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 30 ±20 175 -55 to 175 160 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 640 A 160 A 113 188 W 94 0.8 °C/W 62.5 °C/W 400 mJ Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 1 www.ruichips.com RU30160S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30160S Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±20V, VDS=0V RDS(ON)④ Drain-Source On-state...