RU20120L
N-Channel Advanced Power MOSFET
Features
20V/120A,
RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design Reliable and Rugged 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
Power Management DC-DC Converters
TO...
