1N827

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Mechanical Characteristics: CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable. POLARITY: Cathode indicated by polarity band. WEIGHT: 0.2 Gram (approx.) MOUNTING POSITION: Any Maximum Ratings Junction Temperature: – 55 to +175°C Storage Temperature: – 65 to +175°C DC Power Dissipation: 400 mW @ TA = 50°C WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Phoenix, Arizona 1N821,A 1N823,A 1N825,A 1N827,A 1N829,A TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW CASE 299 DO-204AH GLASS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. VZ = 6.2 V ± 5%* @ IZT = 7.5 mA) (Note 5) Maximum Voltage Change ∆VZ (Volts) (Note 1) Ambient Test Temperature °C ±1°C Temperature Coefficient For Reference Only %/°C (Note 1) Maximum Dynamic Impedance ZZT Ohms (Note 2) JEDEC Type No. 1N821 1N823 1N825 1N827 1N829 0.096 0.048 0.019 0.009 0.005 – 55, 0, +25, +75, +100 0.01 0.005 0.002 0.001 0.0005 15 1N821A 1N823A 1N825A 1N827A 1N829A 0.096 0.048 0.019 0.009 0.005 0.01 0.005 0.002 0.001 0.0005 10 *Tighter-tolerance units available on special request. Motorola TVS/Zener De...