PRELIMINARY
RT5N14BC
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
DESCRIPTION
RT5N14B...
PRELIMINARY
RT5N14BC
Transistor With Resistor For Switching Application Silicon
NPN Epitaxial Type
DESCRIPTION
RT5N14BC is a one chip
transistor with built-in bias
resistor,
PNP type is RT5P14BC.
OUTLINE DRAWING
0.65
2.8 1.5
0.65
FEATURE Built-in bias resistor (R=10kΩ) High collector current (Ic=0.5A)
Mini package for easy mounting
① ②③
2.8 1.90 0.95 0.95
0.4
Unit: mm
APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit
1.1 0.8 0~0.1 0.13
C
(OUT) JEITA:SC-59
B (IN)
R
JEDEC:Similar to TO-236 Terminal Connector ①:BASE
E (GND)
②:EMITTER ③:COLLECTOR
MAXIMUM RATING (Ta=25℃)
SYMBOL
VCBO VEBO VCEO IC PC Tj Tstg
PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature
RATING
50 5 50 500 200 +150 -55~+150
UNIT
V V V mA mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
PARAMETER
VCEO ICBO IEBO VCE(sat) GI R fT
C to E break down voltage Collector cut off current Emitter cut off current C to E saturation voltage DC forward current gain Emitter-base resistor Gain band width product
TEST CONDITION
IC=1mA VCB=50V VEB=5V IC=50mA,IB=2.5mA VCE=5V,IE=100mA ― VCE=10V,IE=-5mA,f=100MHz
MARKING
N.C
MIN
50 ― 0.385 ― 56 7 ―
LIMIT TYP
― ― ― ― ― 10 150
MAX
― 0.5 0.714 0.3 ― 13 ―
UNIT
V μA mA
V ― kΩ MHz
ISAHAYA ELECTRONICS CORPORATION
COLLECコTレORクタDISSIPPAc(TImOW)N Pc(mW)
PRELIMINARY
TYPICAL CHARACTERISTICS (Ta=25℃)
コCレO...