Document
DCR2150C42
Phase Control Thyristor
DS5811-3 January 2014 (LN31255)
FEATURES
Double Side Cooling High Surge Capability
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches
VOLTAGE RATINGS
Part and Ordering Number
Repetitive Peak Voltages
VDRM and VRRM V
Conditions
DCR2150C42 DCR2150C40 DCR2150C35 DCR2150C30
4200 4000 3500 3000
Tvj = -40°C to 125°C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Lower voltage grades available.
KEY PARAMETERS
VDRM IT(AV) ITSM dV/dt*
dI/dt
4200V 2150A 29000A 1500V/µs 400A/µs
* Higher dV/dt selections available
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table.
For example:
DCR2150C42
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order.
Outline type code: C (See Package Details for further information)
Fig. 1 Package outline
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SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS) RMS value
IT Continuous (direct) on-state current
Test Conditions
Half wave resistive load -
DCR2150C42
Max. Units
2150 3377 3280
A A A
SURGE RATINGS
Symbol
Parameter
ITSM Surge (non-repetitive) on-state current I2t I2t for fusing
Test Conditions 10ms half sine, Tcase = 125°C
VR = 0
Max. 29.0 4.2
Units
kA MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Rth(j-c)
Thermal resistance – junction to case Double side cooled Single side cooled
Rth(c-h)
Tvj Tstg Fm
Thermal resistance – case to heatsink Clamping force 37kN
(with mounting compound)
Virtual junction temperature
Blocking VDRM / VRRM
Storage temperature range
Clamping force
DC Anode DC Cathode DC Double side Single side
-55 33.0
Max. Units
0.0101 0.0176 0.0239 0.0025 0.005
125 125 41.0
°C/W °C/W °C/W °C/W °C/W
°C °C kN
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SEMICONDUCTOR
DCR2150C42
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
dI/dt Rate of rise of on-state current
From 67% VDRM to 2x IT(AV) Repetitive 50Hz
Gate source 30V, 10,
Non-repetitive
VT(TO) rT
Threshold voltage – Low level Threshold voltage – High level On-state slope resistance – Low level On-state slope resistance – High level
tr < 0.5µs, Tj = 125°C 500A to 2000A at Tcase = 125°C 2000A to 7000A at Tcase = 125°C 500A to 2000A at Tcase = 125°C 2000A to 7000A at Tcase = 125°C
tgd Delay time
VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C
tq Turn-off time
Tj = 125°C, VR = 200V, dI/dt = 1A/µs,
QS Stored charge
dVDR/dt = 20V/µs linear IT = 2000A, Tj = 125°C, dI/dt – 1A/µs,
IL Latching current
Tj = 25°C, VD = 5V
-
-
250
1000 -
200 1500 200 400
0.9 1.08 0.36 0.265
3
500
3000 3
mA V/µs A/µs A/µs
V V m m µs
µs
µC A
IH Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
- 300 mA
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SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT Gate trigger voltage VGD Gate non-trigger voltage IGT Gate trigger current IGD Gate non-trigger current
Test Conditions
VDRM = 5V, Tcase = 25°C At 50% VDRM, Tcase = 125°C VDRM = 5V, Tcase = 25°C At 50% VDRM, Tcase = 125°C
DCR2150C42
Max. Units 1.5 V 0.4 V 350 mA 10 mA
CURVES
Instantaneous on-state current, IT - (A)
7000 6000 5000
min 125°C max 125°C min 25°C max 25°C
4000
3000
2000
1000
0 0.5 1.0 1.5 2.0 2.5 3.0
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT
Where A = 0.137154 B = 0.132631
C = 0.000248 D = -0.001126 these values are valid for Tj = 125°C for IT 100A to 7000A
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Mean power dissipation - (kW)
SEMICONDUCTOR
DCR2150C42
16
14
12
10
8
6 180
4 120 90
2 60 30
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
130
120 180 120
110 90 100 60
90 30
80
70
60
50
40
30
20
10
0
0
1000
2000
3000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave
Mean power dissipation - (kW)
Maximum case temperature, Tcase ( oC )
130
120 180 110 120
90 100 60
90 30
80
70
60
50
40
30
20
10
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.4 Maximum permissible case temperature, double side cooled – sine wave
12
10
8
6
4 d.c. 180 120
2 90 60 30
0 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation – rectangular wave
Maximum heatsink temperature, THeatsink - (oC )
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Maximum permissible case temperature ,casTe - (°C)
SEMICONDUCTOR
DCR2150C42
130 120 d.c.
.