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DCR2150C42 Dataheets PDF



Part Number DCR2150C42
Manufacturers DYNEX
Logo DYNEX
Description Phase Control Thyristor
Datasheet DCR2150C42 DatasheetDCR2150C42 Datasheet (PDF)

DCR2150C42 Phase Control Thyristor DS5811-3 January 2014 (LN31255) FEATURES  Double Side Cooling  High Surge Capability APPLICATIONS  High Power Drives  High Voltage Power Supplies  Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V Conditions DCR2150C42 DCR2150C40 DCR2150C35 DCR2150C30 4200 4000 3500 3000 Tvj = -40°C to 125°C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grade.

  DCR2150C42   DCR2150C42


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DCR2150C42 Phase Control Thyristor DS5811-3 January 2014 (LN31255) FEATURES  Double Side Cooling  High Surge Capability APPLICATIONS  High Power Drives  High Voltage Power Supplies  Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V Conditions DCR2150C42 DCR2150C40 DCR2150C35 DCR2150C30 4200 4000 3500 3000 Tvj = -40°C to 125°C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 2150A 29000A 1500V/µs 400A/µs * Higher dV/dt selections available ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR2150C42 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. Outline type code: C (See Package Details for further information) Fig. 1 Package outline www.dynexsemi.com 1/10 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value IT Continuous (direct) on-state current Test Conditions Half wave resistive load - DCR2150C42 Max. Units 2150 3377 3280 A A A SURGE RATINGS Symbol Parameter ITSM Surge (non-repetitive) on-state current I2t I2t for fusing Test Conditions 10ms half sine, Tcase = 125°C VR = 0 Max. 29.0 4.2 Units kA MA2s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Rth(j-c) Thermal resistance – junction to case Double side cooled Single side cooled Rth(c-h) Tvj Tstg Fm Thermal resistance – case to heatsink Clamping force 37kN (with mounting compound) Virtual junction temperature Blocking VDRM / VRRM Storage temperature range Clamping force DC Anode DC Cathode DC Double side Single side -55 33.0 Max. Units 0.0101 0.0176 0.0239 0.0025 0.005 125 125 41.0 °C/W °C/W °C/W °C/W °C/W °C °C kN 2/10 www.dynexsemi.com SEMICONDUCTOR DCR2150C42 DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz Gate source 30V, 10, Non-repetitive VT(TO) rT Threshold voltage – Low level Threshold voltage – High level On-state slope resistance – Low level On-state slope resistance – High level tr < 0.5µs, Tj = 125°C 500A to 2000A at Tcase = 125°C 2000A to 7000A at Tcase = 125°C 500A to 2000A at Tcase = 125°C 2000A to 7000A at Tcase = 125°C tgd Delay time VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, QS Stored charge dVDR/dt = 20V/µs linear IT = 2000A, Tj = 125°C, dI/dt – 1A/µs, IL Latching current Tj = 25°C, VD = 5V - - 250 1000 - 200 1500 200 400 0.9 1.08 0.36 0.265 3 500 3000 3 mA V/µs A/µs A/µs V V m m µs µs µC A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA www.dynexsemi.com 3/10 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter VGT Gate trigger voltage VGD Gate non-trigger voltage IGT Gate trigger current IGD Gate non-trigger current Test Conditions VDRM = 5V, Tcase = 25°C At 50% VDRM, Tcase = 125°C VDRM = 5V, Tcase = 25°C At 50% VDRM, Tcase = 125°C DCR2150C42 Max. Units 1.5 V 0.4 V 350 mA 10 mA CURVES Instantaneous on-state current, IT - (A) 7000 6000 5000 min 125°C max 125°C min 25°C max 25°C 4000 3000 2000 1000 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.137154 B = 0.132631 C = 0.000248 D = -0.001126 these values are valid for Tj = 125°C for IT 100A to 7000A 4/10 www.dynexsemi.com Mean power dissipation - (kW) SEMICONDUCTOR DCR2150C42 16 14 12 10 8 6 180 4 120 90 2 60 30 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave 130 120 180 120 110 90 100 60 90 30 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Mean power dissipation - (kW) Maximum case temperature, Tcase ( oC ) 130 120 180 110 120 90 100 60 90 30 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.4 Maximum permissible case temperature, double side cooled – sine wave 12 10 8 6 4 d.c. 180 120 2 90 60 30 0 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave Maximum heatsink temperature, THeatsink - (oC ) www.dynexsemi.com 5/10 Maximum permissible case temperature ,casTe - (°C) SEMICONDUCTOR DCR2150C42 130 120 d.c. .


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