NP84N06DLD

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N06CLD, NP84N06DLD, NP84N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 5 V, ID = 35 A) Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP84N06CLD TO-220AB NP84N06DLD TO-262 NP84N06ELD TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0) VDSS 60 Gate to Source Voltage (VDS = 0) VGSS ±20 Drain Current (DC) Note1 ID(DC) ±84 Drain Current (Pulse) Note2 ID(pulse) ±280 Total Power Dissipation (TA = 25°C) PT1 1.8 Total Power Dissipation (TC = 25°C) PT2 185 Channel Temperature Tch 175 Storage Temperature Tstg -55 to +175 Single Avalanche Current Note3 IAS Figure4 Single Avalanche Energy Note3 EAS Figure4 Repetitive Avalanche Current Note4 IAR 70 Repetitive Avalanche Energy Note4 EAR 490 V V A A W W °C °C A mJ A mJ Notes 1. 2. 3. 4. Package Limit = ± 75 A PW ≤ 10 µs, Duty cycle ≤ 1 % Starting Tch = 25°C, RG = 25 Ω , VGS = 20 V→0 V Tch ≤ 175°C, RG = 25 Ω , VGS = 20 V→0 V, Duty cycle ≤ 3% THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 0.81 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this...