2SA1843

DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES Auto-mounting possible in radial taping specifications Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions High hFE and low VCE(sat): VCE(sat) ≤ −0.3 V @IC = −3.0 A, IB = −0.15 A hFE ≥ 100 @VCE = −2.0 V, IC = −1.0 A Fast switching speed ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions PW ≤ 300 µs, duty cycle ≤ 2% Ta = 25°C Ratings −100 −60 −7.0 −5.0 −10 −2.5 1.8 150 −55 to +150 Unit V V V A A A W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. ...