2SK3157
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS = 50 mΩ typ.
High speed switching 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1082-0300 (Previous: ADE-208-769A)
Rev.3.00 Sep 07, 2005
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G 1. Gate 2. Drain 3. Source
12 3
S
...
